Ion implantation and annealing of compound semiconductor layers

Details Ion implantation and annealing of compound semiconductor layers Ion implantation and annealing of compound semiconductor layers

1987-11-13

1989-09-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG65, 148DIG84, 148DIG72, 148DIG149, 437 26, 437 82, 437126, 437108, 437132, 437 80, 437973, 156603, 156610, H01L 21263, H01L 21225

Patent

active

048638773

ABSTRACT:
A method for reducing the defect and dislocation density in III-V material layers deposited on dissimilar substrates is disclosed. The method involves ion implantation of dopant materials to create amorphous regions within the layers followed by an annealing step during which the amorphous regions are recrystallized to form substantially monocrystalline regions. The wafers produced by the process are particularly well suited for optoelectronic devices.

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