LPE Semiconductor material transfer method

Details LPE Semiconductor material transfer method LPE Semiconductor material transfer method

1984-07-30

1985-10-15

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 156624, H01L 21208

Patent

active

045472300

ABSTRACT:
A method for liquid phase epitaxy maskless deposition of a III-V compound on a substrate in a pre-determined pattern includes the steps of contacting a growth wafer having a patterned mask thereon to a growth solution in equilibrium and then increasing the temperature of the growth solution and wafer thereby locally melting the exposed portions of the wafer surface and locally changing the equilibrium properties of the growth solution. The substrate upon which the material is to be deposited is then contacted with the growth solution and the temperature lowered. Because of the locally varying equilibrium conditions the constituents of the growth solution will be preferentially deposited on those portions of the substrate corresponding to the unmasked portions of the growth wafer.

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