Semiconductor device with capacitor insulating film and method f

Details Semiconductor device with capacitor insulating film and method f Semiconductor device with capacitor insulating film and method f

1992-07-28

1994-09-20

Reynolds, Bruce A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361313, 427 79, 257532, 437 60, H01G 410, H01L 2170

Patent

active

053494946

ABSTRACT:
A semiconductor device has a capacitor insulating film composed of a first and a second silicon nitride film. The surface of a lower electrode of impurity-doped polysilicon is transformed into the first silicon nitride film by thermal nitriding, and thereafter the second silicon nitride film is formed by chemical vapor deposition. An upper electrode is formed on the second silicon nitride film. A silicon oxide film may be formed on the second silicon nitride film by thermal oxidation. The capacitor insulating film which has a thickness of 5 nm or less in equivalent thickness of an oxide film reduces a leakage current and improves a long-term product reliability.

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Inter-Poly SiO.sub.2 /Si.sub.3 N.sub.4 Capacitor Films 5 nm Thick for Deep Submicron LSIs, Extended Abstracts of the 20th (1988 International) Conference on Solid State Devices and Materials (1988), pp. 173-176, by J. Yugami, et al.

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