Semiconductor device using SOI substrate

Details Semiconductor device using SOI substrate Semiconductor device using SOI substrate

1990-08-27

1991-05-21

Prenty, Mark

357 47, 357 54, 357 4, 357 55, H01L 2712, H01L 2702, H01L 2934, H01L 2906

Patent

active

050179985

ABSTRACT:
In a direct bonded SOI substrate where the SiO.sub.2 films OA, OB are respectively provided on the single surfaces of the silicon substrates A, B, at least any one of SiO.sub.2 films OA, OB has thickness of 1 .mu.m or more. These SiO.sub.2 films OA, OB are bonded and moreover the one silicon substrate B of such a bonded substrate is ground to thickness of about 1 .mu.m. A semiconductor device having a trench structure wherein the trench formed on the silicon substrate B passes through the interface between the SiO.sub.2 film OB and the SiO.sub.2 film OA. The bottom of such a trench is located within the SiO.sub.2 film OA and the bottom of the polycrystalline silicon conductive film within the trench is located within the SiO.sub.2 film OA rather than the interface between the silicon substrate B and SiO.sub.2 film OB.

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