Method of making diffused buried plate trench DRAM cell array

Fishing – trapping – and vermin destroying

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437 47, 437 60, 437919, H01L 2170

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053489055

ABSTRACT:
A high density substrate plate DRAM cell memory device and process are described in which a buried plate region is formed adjacent to deep trench capacitors such that the substrate region of DRAM transfer FETs can be electrically isolated from other FETs on a semiconductor substrate. The buried region is partially formed by lateral outdiffusion from the sidewalls of the deep trenches and partially formed by an N-well surface diffusion which entirely surrounds the DRAM array region.

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