Method for treatment of semiconductor wafer

Details Method for treatment of semiconductor wafer Method for treatment of semiconductor wafer

1993-03-12

1994-09-20

Fourson, George

Fishing, trapping, and vermin destroying

H01L 21322

Patent

active

053488938

ABSTRACT:
A method for the impartation of a mechanical distortion to a semiconductor wafer by the collision of particles against the surface of the semiconductor wafer is disclosed which represses the pollution of the semiconductor wafer with impurities from the particles, permits effective removal of the impurities adhering to the surface of the semiconductor wafer, and allows the density of lattice defects imparted into the semiconductor wafer to be freely varied and controlled as desired. The method which effects the intentional impartation of lattice distortion to the surface of the semiconductor wafer by the collision of particles against the semiconductor wafer comprises molding a substance possessing a melting point of not higher than 30.degree. C. and exhibiting solubility in water into particles of a diameter in the range of from 0.001 to 1 mm and causing the particles to collide against the surface of the semiconductor wafer.

REFERENCES:
patent: 4820650 (1989-04-01), Nagae et al.
patent: 4932168 (1990-06-01), Tada et al.
patent: 5035750 (1991-06-01), Tada et al.
Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, 1983, pp. 518-520.

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