Method of integrating semiconductor components

Details Method of integrating semiconductor components Method of integrating semiconductor components

1979-08-06

1981-08-04

Edlow, Martin H.

357 44, 357 49, 357 56, H01L 2948

Patent

active

042825385

ABSTRACT:
A dielectric-isolated PNP transistor with Schottky protection, either alone or as one of an integrated pair of complementary bipolar transistors has complete dielectric isolation from neighboring devices and from the substrate by means of a topside anisotropic etch. This leaves the devices in mesa form, thinner versions having the facility of lateral terminations, e.g. for the collector. The method is advantageously adapted to provide single type or complementary bipolars with integrated Schottky barrier protection.

REFERENCES:
patent: 3623925 (1971-11-01), Jenkins
patent: 3818583 (1974-06-01), Polata
patent: 4005469 (1977-01-01), Chang
patent: 4063271 (1977-12-01), Bean
patent: 4127860 (1978-11-01), Beelitz
patent: 4156246 (1979-05-01), Pederson

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