Process for manufacturing a semiconductor package with bi-substr

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

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438109, 438613, H01L 2158, H01L 21603, H01L 2166

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active

059465530

ABSTRACT:
A method for forming an interconnect for semiconductor devices is provided. The interconnect includes raised contact structures covered with a conductive layer and having penetrating projections for penetrating contacts for the semiconductor devices. In an illustrative embodiment, the interconnect can be used to form a bi-substrate die. An interconnect substrate for the bi-substrate die includes control and logic circuitry and a memory substrate for the bi-substrate die includes a memory array. The interconnect can also be used to establish an electrical connection to microscopic contacts formed on a conventional die. In addition, the interconnect can be formed with three dimensional micro structures for contacting the microscopic contacts. Still further, the interconnect can be formed as wafer interconnect for electrically contacting dice contained on a wafer or for stacking multiple wafers.

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