Method of depositing passivation layers on semiconductor device

Details Method of depositing passivation layers on semiconductor device Method of depositing passivation layers on semiconductor device

1996-02-26

1999-08-31

Bowers, Charles

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

437786, H01L 21316

Patent

active

059465425

ABSTRACT:
A method of forming a silicon oxynitride (SiO.sub.x N.sub.y) passivation layer on a first side of a silicon wafer that has a plurality of parallel spaced conductive runners positioned thereon. The method comprises the steps of mixing TEOS, Oxygen, Nitrogen and either Ammonia or Diethyl amine and then introducing the mixture into a plasma deposition chamber containing the wafers that are to receive the passivation layer. The mixture is then energized into a plasma which results in a silicon oxynitride passivation layer being deposited onto the upper surface of the silicon wafer. Due to the characteristics of the TEOS gas, the passivation layer is very conformal which reduces the formation of keyholes in the passivation layer.

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