Semiconductor device having a conductive layer for preventing in

Details Semiconductor device having a conductive layer for preventing in Semiconductor device having a conductive layer for preventing in

1990-08-08

1992-05-12

Carroll, J.

357 231, 357 2312, 357 2313, 357 53, 357 71, H01L 2701, H01L 2978, H01L 2702, H01L 2940

Patent

active

051132303

ABSTRACT:
On a semiconductor substrate between the source region and drain region, there is provided a gate electrode, through an insulation layer. There is further provided a conductive layer partially allowed to electrically contact this gate electrode and covering the region above the side edge portions of the gate electrode so as to mitigate the intensity of an electric field at those side edge portions.

REFERENCES:
patent: 3518506 (1970-06-01), Gates
patent: 3862017 (1975-06-01), Tsunemtsu et al.
patent: 4074300 (1978-02-01), Sakai et al.
patent: 4288806 (1981-09-01), Ronen
patent: 4423433 (1983-12-01), Imaizumi et al.
patent: 4424579 (1982-01-01), Roesner
patent: 4443812 (1984-04-01), Imaizumi et al.
R. Allen, "Thin-film deoids on silicon chip with stand up to 500.degree. C.", Electronics, vol. 50, (Jan. 1980), pp. 39-40.
T. Okabe et al., "MOS FET's for Power Amplifier Use", Electronics and Communications in Japan, vol. 63-C (1980), pp. 113-121.
M. J. Walker, "A Compatible Technique for the Formation of Thin Tantalum Film Resistors on Silicon Integrated Circuits", IEEE Transactions on Electron Devices, vol. ED-13 (May 1966) pp 472-476.
Japanese Patent Publication (KOKOKU) No. 43-455 H. Egawa.
Japanese Patent Publication (KOKOKU) No. 45-34641, S. Kubo et al., Nov. 6, 1970.
Japanese Patent Publication (KOKOKU) No. 52-33471, S. Kubo et al., Aug. 29, 1977.

Affiliated with

Also associated with

Rating

Semiconductor device having a conductive layer for preventing in does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a conductive layer for preventing in, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a conductive layer for preventing in will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2427103