Semiconductor device having a conductor through an inter-level l

Details Semiconductor device having a conductor through an inter-level l Semiconductor device having a conductor through an inter-level l

1997-07-15

1999-08-31

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257280, 257281, 257700, 257759, 257752, 257753, 257754, 257755, 257756, 257757, 257748, 257781, 257643, 257750, H01L 2348

Patent

active

059457392

ABSTRACT:
A multi-layered wiring structure includes a lower wiring having an upper surface, a first inter-level insulating layer having a first flat upper surface substantially coplanar with the upper surface of the lower conductive wiring and a recess contiguous to the first flat upper surface, a spin-on-glass layer filling the recess and having a second flat upper surface substantially coplanar with the first flat upper surface, a second inter-level insulating layer covering the first and second flat surfaces and the upper surface of the lower conductive wiring and an upper conductive wiring extending on the second inter-level insulating layer and passing through a contact hole of the second inter-level insulating layer so as to be held in contact with the lower conductive wiring, and the first and second flat upper surfaces are created through an etch-back using gaseous etchant equally etching the first inter-level insulating layer and the spin-on-glass layer, thereby creating smooth surface under the second inter-level insulating layer.

REFERENCES:
patent: 5094965 (1992-03-01), Ozaki et al.
patent: 5306947 (1994-04-01), Adachi et al.
patent: 5705856 (1998-01-01), Wakabayashi
Japanese Office Action dated May 19, 1998 with English language translation of Japanese Examiner's comments.

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