Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1997-05-02
1999-08-31
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257232, 257233, 257234, 257257, 257258, 257432, 257437, 257789, 349 67, 349 97, 349104, 349105, 349106, 349113, G02F 11343, G02F 11335
Patent
active
059457228
ABSTRACT:
A color active pixel sensor cell is formed by utilizing four photodiodes which are each covered with a layer of oxide. The thicknesses of the layers of oxide are set so that a first layer of oxide prohibits red light from entering the first photodiode, a second layer of oxide prohibits green light from entering the second photodiode, a third layer of oxide prohibits blue light from entering the third photodiode, and a fourth layer of oxide allows visible light to enter the fourth photodiode. The amount of red light received by the cell is then determined by subtracting the light energy collected by the first photodiode from the light energy collected by the fourth photodiode. Similarly, the amount of green and blue light received by the cell is determined by subtracting the light energy collected by the second and third photodiodes, respectively, from the amount of light energy collected by the fourth photodiode.
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Chi Min-hwa
Tsuei Gu-Fung David
Abraham Fetsum
National Semiconductor Corporation
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