Plasma processing method

Details Plasma processing method Plasma processing method

1997-10-01

1999-08-31

Chang, Joni

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

427569, H01L 21302

Patent

active

059453532

ABSTRACT:
In a plasma processing method and apparatus for carrying out plasma processing by supplying a high-frequency power of 20 MHz to 450 MHz to cause discharge to take place between a first electrode serving also as a film forming substrate and a second electrode provided so as to surround the first electrode, the high-frequency power is supplied from its power source to the second electrode at two points at least. In plasma processing apparatuses as typified by plasma CVD apparatuses to which the high-frequency power of a frequency from 20 MHz to 450 MHz is supplied, this method and apparatus can effectively decrease unevenness in plasma processing in the peripheral direction of the film formed, can promise a high plasma processing rate and can improve the characteristics of a deposited film during deposited film formation.

REFERENCES:
patent: 4915978 (1990-04-01), Von Campe et al.
patent: 4958591 (1990-09-01), Yamazaki
patent: 5175021 (1992-12-01), Bonsaver et al.
patent: 5370737 (1994-12-01), Mathis
patent: 5540781 (1996-07-01), Yamagami et al.

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