Method for etching damaged zones on an edge of a semiconductor s

Details Method for etching damaged zones on an edge of a semiconductor s Method for etching damaged zones on an edge of a semiconductor s

1997-06-02

1999-08-31

Dang, Thi

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438710, 438715, 438726, 438727, 438731, 438745, H01L 2930

Patent

active

059453516

ABSTRACT:
The apparatus and method of the invention allow etching of the edge of a semiconductor substrate even where no resist is applied to the front side and back side of the semiconductor substrate. The semiconductor substrate is introduced into a protective chamber within an evacuatable process chamber. The front side and the back side of the semiconductor substrate are covered by the protective chamber except for the edge of the semiconductor substrate to be etched. The edge of the semiconductor substrate is then exposed to an etching agent. Etching products and excess etching agent are removed.

REFERENCES:
patent: 4350562 (1982-09-01), Bonu
Abstract of "Chemical Etching of Silicon Wafer Rim", IBM Technical Disclosure Bulletin, Jun. 1981.
"Spin Etcher for Removal of Backside Depositions" (Gaulhofer), 400 Solid State Technology, vol. 34, No. 5, May 1991, pp. 57-58 and 219.
Japanese Patent Abstract No. 2-192717 (Isono), dated Jul. 30, 1990.
Japanese Patent Abstract No. 58-98925 (Ishikawa), dated Jun. 13, 1983.
Japanese Patent Abstract No. 1-196832 (Sato), dated Aug. 8, 1989.
Japanese Patent Abstract No. 7-142449 (Kiyotaka), dated Jun. 2, 1995.
Japanese Patent Abstract 07-142449 A (Masuda, K.) dated Jun. 2, 1995.
Japanese Patent Abstract 2-192717 (Kenji O.) dated Jul. 30, 1990.
Japanese Patent Abstract 58-98925 (Oonori I.) dated Jun. 13, 1983.
Japanese Patent Abstract 1-196832 (Mitsuo S.), dated Aug. 8, 1989.

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