Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1996-04-04
1999-08-31
Codd, Bernard
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438386, 438393, 438430, 438622, 438633, 438697, 438760, 438902, 438959, 216 6, 216 18, 216 89, H01G 1300
Patent
active
059453486
ABSTRACT:
A region is formed in a semiconductor substrate and extends beyond the substrate surface. First and second interconnects each having a predetermined thickness and a surface approximately parallel to the substrate surface are formed on the region. The first and second interconnects define a trench therebetween. A third interconnect is formed on the substrate. The thicknesses of the first and second interconnects are reduced a first amount to improve the aspect ratio of the trench, to improve the cross-sectional profile of the trench, or both. The thickness of the third strip is reduced a second amount. The second amount may be smaller than the first amount.
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Blalock Guy
Kim Sung
Meikle Scott
Prall Kirk
Codd Bernard
Micro)n Technology, Inc.
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