Method of fibricating a semiconductor device having a trench

Details Method of fibricating a semiconductor device having a trench Method of fibricating a semiconductor device having a trench

1989-06-12

1992-05-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 52, H01L 2176

Patent

active

051127717

ABSTRACT:
A semiconductor device having a trench (30) comprises a semiconductor substrate (11), a plurality of elements (13) provided on the semiconductor substrate, a trench (30) provided between the elements and an insulating material (12) embedded in the trench for isolating the elements. The trench has its bottom portion region enlarged in both sides.
The semiconductor device is manufactured by enlarging the bottom portion region of the trench by etching.

REFERENCES:
patent: 4845048 (1989-07-01), Tamaki et al.
IEE Proceedings, vol. 134, Pt. I, No. 1, Feb. 1987.

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