Mask and method of creating mask as well as electron-beam exposu

Details Mask and method of creating mask as well as electron-beam exposu Mask and method of creating mask as well as electron-beam exposu

1996-07-22

1998-10-20

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430296, G03F 900

Patent

active

058244379

ABSTRACT:
A mask for exposure of an object by an electron beam is formed of a plate of material which blocks the electron beam and which has plural pattern exposure blocks defined therein, each having one or more aperture defining regions therein and, when selected, determining the shaping of the electron beam passing therethrough so as to expose a respective pattern on an object. Each aperture-defining region has one aperture or plural, spaced apertures formed respectively therein, having a total area size, selected to be smaller than the area size of the aperture defining region in accordance with controlling the current level of an electron beam passing therethrough, while reducing Coulomb interaction of the electron beam passing through the aperture or apertures of each aperture defining portion of the pattern exposure block.

REFERENCES:
patent: 5288567 (1994-02-01), Sakamoto et al.
patent: 5557110 (1996-09-01), Itoh
Yamashita et al., "Resolution analysis in electron-beam cell projection lithography system," J. Vac. Sci. Technol. B. vol. 13, No. 6, Nov./Dec. 1995, pp. 2473-2477.

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