Dry etching post-treatment method and method for manufacturing a

Details Dry etching post-treatment method and method for manufacturing a Dry etching post-treatment method and method for manufacturing a

1997-08-04

1999-05-11

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438725, 438743, 216 67, 216 79, H01L21/00

Patent

active

059021349

ABSTRACT:
The present invention has an object of providing a method for manufacturing a semiconductor device wherein an underlying silicon substrate or polycrystalline silicon film is less subject to etching during ashing. A method for manufacturing a semiconductor device according to the present invention comprises the steps of: covering a predetermined portion of an insulating film (2) on the silicon substrate (1) or the polycrystalline silicon film with a photoresist (3); removing a portion of said insulating film (2) not covered with the photoresist by dry etching using an etching gas containing carbon and fluorine; and removing a fluorocarbon film (6) deposited on the surface of the substrate and said photoresist 3 by ashing using at least an oxygen gas while controlling the temperature at 100.degree. C. or lower, wherein the underlying silicon substrate or polycrystalline silicon film is less subject to etching during the ashing.

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Zenqi Yu et al.; "Wide-Area Near Afterglow Oxygen Radical Source Used As A Polymer Resist Asher"; vol. 59, No. 10; Sep. 2, 1991, pp. 1194-1196, XP000234539 *p. 1195, col. 1, paragraph 2--col. 2, paragraph 2; figure 2*.
Patent Abstracts of Japan; vol. 018, No. 617 (E-1634), Nov. 24, 1994 & JP 06 236864A (Hitachi Ltd), Aug. 23, 1994 * abstract*.
Zia Hasan et al.; "In Situ Auto Ash: A Key To Reducing Process Generated Particles"; Proceedings of the SPIE; vol. 1593, Sep. 9, 1991, pp. 23-31, XP000195499.

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