Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

1985-11-15

1987-11-24

Kittle, John E.

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

428901, 156656, 156657, 20419234, 427 96, 430396, B32B 300, B44C 122, C23C 1400, B05D 512

Patent

active

047089040

ABSTRACT:
A semiconductor device and a method of manufacturing the same which comprises a semiconductor substrate and a conductive region formed thereon in multilayer structure of a film of refractory metal or refractory metal silicide inferior in corrosion resistance against a solution containing hydrofluoric acid and a film of refractory metal silicide excellent in corrosion resistance against the solution containing hydrofluorine acid and low electric resistance formed on the same.

REFERENCES:
patent: 3286312 (1966-11-01), Davis et al.
patent: 4227944 (1980-10-01), Brown et al.
patent: 4443930 (1984-04-01), Hwang et al.
patent: 4472237 (1984-09-01), Deslauriers et al.
patent: 4486266 (1984-12-01), Yamasuchi
"Refractory Silicides for Integrated Circuits", by S. P. Murarka, J. Vac. Sci. Technol., 17(4), Jul./Aug. 1980, pp. 775-792.

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