Semiconductor memory and method for fabricating the same

Details Semiconductor memory and method for fabricating the same Semiconductor memory and method for fabricating the same

1988-06-10

1991-05-21

James, Andrew J.

357 51, H01L 2968, H01L 2978, H01L 2992

Patent

active

050179810

ABSTRACT:
A semiconductor memory is provided having a capacitor formed by utilizing a groove formed in a semiconductor substrate and an insulated gate field effect transistor. In particular, an arrangement is provided to prevent a depletion region formed around the groove from growing into an adjacent capacitor. By virtue of this, both the area occupied by each memory cell and the distance between the memory cells can be made very small. Accordingly, high density integration is facilitated.

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Sze, S. M., Physics of Semiconductor Devices, 2nd Ed., John Wiley, 1981, pp. 496-497.

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