Electrically-erasable, electrically-programmable read-only memor

Details Electrically-erasable, electrically-programmable read-only memor Electrically-erasable, electrically-programmable read-only memor

1990-03-15

1991-05-21

Hille, Rolf

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 54, 365185, H01L 2968, H01L 2934, G11C 1134

Patent

active

050179802

ABSTRACT:
An electrically-erasable, programmable ROM cell, or an EEPROM cell, is constructed using an enhancement transistor merged with a floating-gate transistor, where the floating-gate transistor has a small tunnel window, in a contact-free cell layout, enhancing the ease of manufacture and reducing cell size. The bitlines and source/drain regions are buried beneath relatively thick silicon oxide, which allows a favorable ratio of control gate to floating gate capacitance. Programming and erasure are provided by the tunnel window area, which is located near or above the channel side of the source. The window has a thinner dielectric than the remainder of the floating gate, to allow Fowler-Nordheim tunneling. By using dedicated drain or ground lines, rather than a virtual-ground layout, and by using thick oxide for isolation between bitlines, the floating gate can extend onto adjacent bitlines and isolation area, resulting in a favorable coupling ratio. Isolation between cells in the wordline direction is by a self-aligned implanted region, in this embodiment.

REFERENCES:
patent: 4180826 (1979-12-01), Shappir
patent: 4203158 (1980-05-01), Bentchkowsky
patent: 4377818 (1983-03-01), Kuo et al.
patent: 4377857 (1983-03-01), Tickle
patent: 4493057 (1982-09-01), McElroy
patent: 4590504 (1986-05-01), Guterman
patent: 4622737 (1986-11-01), Ravaglia
patent: 4668970 (1987-05-01), Yatsuda et al.
patent: 4686558 (1987-08-01), Adam
patent: 4750024 (1988-06-01), Schreck

Affiliated with

Also associated with

Rating

Electrically-erasable, electrically-programmable read-only memor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically-erasable, electrically-programmable read-only memor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically-erasable, electrically-programmable read-only memor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-242270