Resonant tunneling device

Details Resonant tunneling device Resonant tunneling device

1988-12-21

1991-05-21

Wojciechowicz, Edward J.

357 16, 357 57, 357 61, H01L 2712

Patent

active

050179730

ABSTRACT:
A resonant tunneling device includes a superlattice layer which includes an interlaminated structure of three semiconductor layers each having a narrow energy bandgap and serving as a quantum well layer and four semiconductor layers each having a wide energy bandgap and serving as a barrier layer and in which three quantum levels are formed in the quantum well layers. A resonant tunneling phenomenon produced between the quantum levels provides peak current values which are substantially equal to each other, peak voltages which can be set independently from each other, and peak-to-valley (P/V) ratios which are high, thereby realizing a resonant tunneling device which has an excellent performance as a three state logic element for a logic circuit. By increasing the number of quantum well layers and the number of barrier layers, a logic element of four or more states can be realized for a logic circuit.

REFERENCES:
Summers et al.-Appl. Phys. Lett. 52(2), 11 Jan. 1988, pp. 132-134.
Morkoc et al.-Appl. Phy. Lett. 49(2), 14 Jul. 1986, pp. 70-72.
Jiang et al.-IEEE Trans. on Electron Dev., vol. 36, No. 12, Dec. 1989, pp. 2816-2820.
Japanese Journal of Allied Physics, vol. 24, pp. L466-L468, 1985.
Electronics Letters, vol. 22, No. 8, pp. 406-407, 1986.
Appl. Phys. Lett. 49, pp. 73-75, 1986.
"Resonant Tunneling Through Double Barriers, Perpendicular Quantum Transport Phenomena in Superlattices, and Their Device Applications", IEEE Journal of Quantum Electronics, vol. QE-22, No. 9, Sep. 1986, pp. 1853-1869.
"Thermally stimulated resonant current in AlGaAs/GaAs triple barrier diodes", Appl. Phys. Lett 51(6).10, Aug. 1987, pp. 445-447.

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