Semiconductor switch including a power transistor integrated wit

Details Semiconductor switch including a power transistor integrated wit Semiconductor switch including a power transistor integrated wit

1994-05-10

1995-07-18

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257360, 257469, H01L 27088, H01L 2978

Patent

active

054344433

ABSTRACT:
A semiconductor switch includes a power FET and a temperature sensor for providing a control signal to switch off the power FET when it reaches a predetermined thermal condition, such as a particular temperature. The power FET consists of a semiconductor body having a first region (13) of a first conductivity type adjacent one major surface (10a) thereof, and a plurality of cells (11). Each such cell has a second region (32) of the second (opposite) conductivity type provided within the first region (13), a third region (33) of the first conductivity type formed within the second region (32), and an insulated gate overlying a conduction channel in the second region (32) between the first and third regions (33 and 13). The temperature sensor (2) is formed within the semiconductor body (10) and consists of a number of further cells (11') of the same structure as the cells (11) of the power FET. The insulated gate of each further cell (11') is electrically connected to the third region (33') so as to form a parasitic bipolar transistor having a leakage current which varies with temperature, thereby enabling the temperature sensor to provide a control signal to switch off the power FET when the predetermined thermal condition is reached.

REFERENCES:
patent: 4730228 (1988-03-01), Eimzinger et al.
patent: 4896196 (1990-01-01), Blanchard
patent: 4903106 (1990-02-01), Fukunaga et al.
patent: 4924111 (1990-05-01), Anderson et al.
patent: 4931844 (1990-06-01), Zommer
patent: 5034796 (1991-07-01), Zommer
patent: 5063307 (1991-11-01), Zommer

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