Trench gate lateral MOSFET

Details Trench gate lateral MOSFET Trench gate lateral MOSFET

1994-05-04

1995-07-18

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257332, 257339, 257491, H01L 27085, H01L 27088, H01L 27105

Patent

active

054344352

ABSTRACT:
A trench gate lateral MOSFET structure has the voltage supported along side walls and the bottom surface of the trench. With narrow source and drain mesa regions that are optimally doped, a uniform electric field is obtained vertically in the mesa regions and horizontally at the bottom of the trench, allowing a relative high doping level in an N-drift region resulting in specific on-resistances well below those of conventional lateral MOSFETs at a high breakdown voltage.

REFERENCES:
patent: 5142640 (1992-08-01), Iwamatsu

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