Semiconductor device MOSFET with V-shaped drain contact

Details Semiconductor device MOSFET with V-shaped drain contact Semiconductor device MOSFET with V-shaped drain contact

1989-01-03

1989-08-22

Mintel, William A.

357 68, 357 2311, 357 234, 357 238, 357 2314, H01L 2906

Patent

active

048600849

ABSTRACT:
A concave portion having a V-shaped cross section is formed in a contact region of a p-type silicon substrate. The contact region is defined by a hole formed in an insulative layer formed over the substrate. An n-type diffusion layer is formed in the substrate so as to surround the concave portion. The n-type diffusion layer is connected to a drain region of a FET. A metal layer is formed on the insulative layer such that the metal layer is in electric contact with the diffusion layer through the increased surface area of the concave portion in the contact region.

REFERENCES:
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patent: 4622569 (1986-11-01), Lade et al.
patent: 4625225 (1925-11-01), Goodfellow et al.
patent: 4633281 (1986-12-01), Benjamin et al.
patent: 4646118 (1987-02-01), Takemae

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