Vertical semiconductor device having a sidewall emitter

Details Vertical semiconductor device having a sidewall emitter Vertical semiconductor device having a sidewall emitter

1987-09-28

1989-08-22

Edlow, Martin H.

357 59, H01L 2972

Patent

active

048600776

ABSTRACT:
A low capacitance, high performance semiconductor device is described having a sidewall emitter wherein the emitter width is relatively small (approximately 0.5 micrometers). This enables a small emitter-base interface which reduces capacitance. Additionally, the regions of the base and collector near their interface are lightly doped so that collector-base capacitance is greatly reduced.

REFERENCES:
patent: 4339767 (1982-07-01), Horng et al.
patent: 4764799 (1988-08-01), Malaviya
patent: 4764801 (1988-08-01), McLaughlin et al.
patent: 4769687 (1988-09-01), Nakazato et al.

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