Solid state image device

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Details

357 2, 357 4, 357 61, H01L 4500, H01L 2712, H01L 2714, H01L 29161

Patent

active

048600768

ABSTRACT:
A solid state imaging device comprises a transparent electrode, a photoconductive layer, and a plurality of scanning circuits for consecutively selecting signals in the photoconductive layer. The photoconductive layer is formed of amorphous semiconductor comprising amorphous silicon as the major component and further containing an element serving to lower the capture level within the energy gap and a trace amount of chalcogen element as a chemical modifier.

REFERENCES:
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4239554 (1980-12-01), Yamazaki
patent: 4354104 (1982-10-01), Chikamura et al.
patent: 4360821 (1982-11-01), Tsukada et al.

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