Patent
1987-10-02
1989-08-22
Wojciechowicz, Edward J.
357 2, 357 58, 357 59, 357 63, H01L 3300
Patent
active
048600695
ABSTRACT:
A non-single-crystal semiconductor light emitting device comprising a first electrode, a first conductiveity type non-single-crystal semiconductor layer formed on the first electrode, a non-single-crystal semiconductor region formed on the first non-single-crystal semiconductor layer, a second conductivity type non-single-crystal semiconductor layer formed on the nonsingle-crystal semiconductor region, and a second electrode formed on the second non-single-crystal semiconductor layer. The non-single-crystal semiconductor region is formed by a third non-single-crystal semiconductor layer or a laminate member made up of a plurality m (where m.gtoreq.3) of non-single-crystal semiconductor layers M.sub.1, M.sub.2, . . . M.sub.m. The third non-single-crystal semiconductor layer and even-numbered non-single-crystal semiconductor layer M.sub.i (i=2, 4, . . . (m-1) are formed of silicon and so doped with hydrogen or fluorine in an amount of more than 30 atom % as to provide it an (SiH.sub.2).sub.n or (SiF.sub.2).sub.n structure. The odd-numbered non-single-crystal semiconductor layers M.sub.(i-1) and M.sub.(i+1) have larger energy band gaps than does the even-numbered non-single-crystal semiconductor layer M.sub.i.
REFERENCES:
patent: 4342044 (1982-07-01), Oushinsky et al.
patent: 4409605 (1983-10-01), Oushinsky et al.
patent: 4527179 (1985-07-01), Yamazaki
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Wojciechowicz Edward J.
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