Semiconductor devices and methods of making such devices

Details Semiconductor devices and methods of making such devices Semiconductor devices and methods of making such devices

1988-01-27

1989-08-22

James, Andrew J.

357 22, 357 232, 357 47, H01L 29161, H01L 29205, H01L 29225

Patent

active

048600687

ABSTRACT:
Single GaAs quantum well or single GaAs active layer or single reverse interface structures with Al.sub.x Ga.sub.1-x As barrier layers have improved qualities when one or more narrow bandgap GaAs getter-smoothing layers, which are thin, are grown and are incorporated in the barrier layer before and in close proximity to the active layer.

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