Method of making semi-conductor diffusion furnace components

Details Method of making semi-conductor diffusion furnace components Method of making semi-conductor diffusion furnace components

1988-07-27

1989-09-05

Silbaugh, Jan H.

Plastic and nonmetallic article shaping or treating: processes

Including step of generating heat by friction

264 63, 264 66, 501 88, C04B 3552, C04B 3556, C04B 3564, C04B 4181

Patent

active

048636576

ABSTRACT:
A sintered silicon carbide matrix component for a semi-conductor diffusion furnace results from sintering a mixture of three types of silicon carbide powder. The mixture includes fine silicon carbide having an average particle size of 0.1-10 microns, intermediate silicon carbide having an average particle size of 12-30 microns and coarse silicon carbide having an average particle size of 40-200 microns. The difference between the average particle sizes of the three types of powder is at least 10 microns.

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