Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Electron or ion source
Patent
1987-09-23
1989-08-22
Groody, James J.
Electric lamp and discharge devices: systems
Discharge device load with fluent material supply to the...
Electron or ion source
313230, 31323131, 3133591, 313161, 31511121, 31511141, H01J 2702
Patent
active
048599085
ABSTRACT:
A plasma processing apparatus performs various plasma processings of a substrate having a large area in a semiconductor element manufacturing process, by using highly excited plasma generated at a low pressure under the application of RF power and a magnetic field. In this plasma processing apparatus, a gas is introduced into a vacuum chamber to be used as an ion source, RF power is applied to two electrodes having respective surfaces opposite to each other through the gas to thereby generate the plasma in the vacuum chamber, and a magnetic field is applied to the plasma from a magnetic field source arranged at a predetermined position. The intensity of the applied magnetic field is set to be 1.5 times or more the magnetic field intensity which causes electron cyclotron resonance to occur at the frequency f of the applied RF power. Particularly, when the frequency f of the RF power is 13.56 MHz, the magnetic field intensity is selected to be in the range from 25 gausses to 35 gausses.
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Hirao Takashi
Setsune Kentaro
Yoshida Akihisa
Groody James J.
Matsushita Electric - Industrial Co., Ltd.
Powell Mark R.
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