Fishing – trapping – and vermin destroying
Patent
1988-12-29
1989-08-22
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437107, 437184, 437192, 437902, 437904, 357 51, 357 81, H01L 2348, H01L 3902
Patent
active
048596337
ABSTRACT:
Two-terminal active devices, such as IMPATT and Gunn diodes, are combined with passive devices in a monolithic form using a plated metal heat sink to support the active elements and a coated-on dielectric to support the passive elements. Impedance-matching circuitry is preferably placed very close to (or partially overlapping) the active device, thereby eliminating detrimental device-to-circuit transition losses.
REFERENCES:
patent: 3959045 (1976-05-01), Antypas
patent: 3993515 (1976-11-01), Reichert
patent: 4035830 (1977-07-01), Kim
patent: 4152718 (1979-05-01), Cachier
patent: 4200880 (1980-05-01), Frey
patent: 4283734 (1981-08-01), Espaignol
patent: 4319265 (1982-03-01), Rosen et al.
patent: 4374394 (1983-02-01), Camisa
patent: 4376287 (1983-03-01), Sechi
patent: 4544989 (1985-10-01), Nakabu et al.
Pengelly, "Microwave FETs--Theory, Design and Applications", Copyright 1982, pp. 381-399.
Ohwada et al, "GaAs 256-Bit RAM", Electronics Letter, Apr. 1982, vol. 18, No. 7, pp. 299-300.
Coulton, "The Lumped Element Approach to Microwave Integrated Circuits", Microwave Journal, May 1970, pp. 51-58.
Sokolov et al., 1979 IEEE MTT-S International Microwave Symposium Digest, Orlando, FL, USA, pp. 489-491.
Heitzmann et al, "New Progress in the Development of a 94-GHz Pretuned Module Silicon IMPATT Diode", IEEE Transactions on Electron Devices, vol. ED-30, No. 7, Jul. 1983, pp. 759-763.
Cachier et al, "Millimeter-Wave Pretuned Modules", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-27, No. 5, May 1979, pp. 505-510.
Pelous et al, "Ohmic Contacts to III-V Compound Semiconductors: A Review of Fabrication Techniques," Solid State Electronics, vol. 26, No. 3, pp. 179-197, 1983.
Chaudhuri Olik
Comfort James T.
Hoel Carlton H.
Pawlikowski Beverly A.
Sharp Melvin
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