Variable-capacitance diode element having wide capacitance varia

Details Variable-capacitance diode element having wide capacitance varia Variable-capacitance diode element having wide capacitance varia

1990-01-17

1991-05-21

James, Andrew J.

357 13, 357 89, 357 90, 357 20, H01L 2992

Patent

active

050179500

ABSTRACT:
A variable-capacitance diode element is disclosed which comprises a semiconductor substrate of a first conductivity type having an epitaxial layer of the first conductvity type provided on a main surface portion thereof, said epitaxial layer having a higher resistivity than that of said semiconductor substrate; a first diffusion layer of the first conductivity type diffused in said epitaxial layer and having a lower resistivity than that of said epitaxial layer; a second diffusion layer of a second conductivity type surrounded by said first diffusion layer and having a lower resistivity than that of said first diffusion layer; and a third diffusion layer of the second conductivity type of a small diffusion length covering an exposed portion of a major surface of said first diffusion layer and an exposed portion of a major surface of said diffusion layer. With such construction, the capacitance variation range of the diode element is widened, and the high-frequency serial resistance R.sub.S is reduced, so that the quality factor Q is enhanced.

REFERENCES:
patent: 3646411 (1971-02-01), Iwasa
patent: 3909119 (1978-09-01), Wolley
patent: 4267557 (1981-05-01), Muramoto et al.
patent: 4475117 (1984-10-01), Raabe
patent: 4594602 (1986-06-01), Iimura et al.
patent: 4626882 (1986-12-01), Cottrell et al.
patent: 4870467 (1989-09-01), Boland et al.

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