Semiconductor laser device having a buried heterostructure

Details Semiconductor laser device having a buried heterostructure Semiconductor laser device having a buried heterostructure

1987-06-26

1989-01-17

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

047992271

ABSTRACT:
A semiconductor laser device having a buried heterostructure which includes a multi-layered crystal structure, containing an active layer for laser oscillation, on a substrate, said multi-layered crystal structure having a striped mesa-portion, a multi-layered structure surrounding said mesa-portion and a burying layer disposed on an upper face of said striped mesa-portion. The unique structure results in a heterojunction at each side of the active layer.

REFERENCES:
patent: 4470143 (1984-09-01), Kitamura et al.
patent: 4597085 (1986-06-01), Mito et al.
Applied Physics Letters, vol. 39, No. 5, 1st Sep. 1981, pp. 376-378, American Inst. of Physics-Van Der Ziel et al.
Patent Abstracts of Japan, vol. 6, No. 147, Aug. 6, 1982.

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