Metal oxide semiconductor gated turn off thyristor

Details Metal oxide semiconductor gated turn off thyristor Metal oxide semiconductor gated turn off thyristor

1987-07-06

1989-01-17

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 234, 357 55, 357 46, 307633, H01L 2974, H01L 2978, H01L 2906, H01L 2702

Patent

active

047990953

ABSTRACT:
An MOS gate turn-off thyristor structure includes non-regenerative (three-layer or transistor) portions interspersed with the four-layer regenerative (thyristor) portions and further includes gate electrode segments disposed adjacent to relatively narrow portions of the base region. Upon application of an appropriate turn-off gate bias to the gate electrode segments, the base region of the regenerative portion in which they are disposed is pinched off and the current flowing therethrough is diverted to flow through the non-regenerative portion of the structure. This interrupts regeneration in the regenerative structure and the device turns off.

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Temple, V.A.K., "Improved Semiconductor Devices Exhibiting Minimum On-Resistance", U.S. patent application Ser. No. 938,692 filed 12/5/86.

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