Patent
1981-10-23
1989-01-17
James, Andrew J.
357 13, 357 231, H01L 2988, H01L 2936, H01L 2920
Patent
active
047990902
ABSTRACT:
A tunnel injection controlling type semiconductor device comprising a source semiconductor region having a certain conductivity type for supplying carriers, a drain semiconductor region for receiving the carriers, and a gate electrode for controlling the flow of these carriers. A highly-doped semiconductor region having a conductivity type opposite to that of the source semiconductor region is provided in contact with the source region or contained locally in the source region to cause tunnel injection of carriers. The potential level of this highly-doped region is varied by virtue of the static induction effect exerted by the voltage applied to the gate electrode which is provided at a site close to but separate from the highly-doped region, and to the drain semiconductor region.
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Margalit et al., "Field Induced Tunnel Diode in Indium Antimonide", Journal of Applied Physics, vol. 46, No. 9, pp. 3999-4001, Sep. 1975.
James Andrew J.
Lamont John
Zaidan Hojin Handotai Kenkyu Shinkokai
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