Driving circuit for cascode BiMOS switch

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307446, 307270, 307544, H03K 1760, H03K 500, H03K 301, H03K 1902

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active

047989831

ABSTRACT:
A driving circuit for driving a cascode bype BiMOS switch which includes a bipolar transistor whose collector is connected through a load to a positive electrode of a power source and a field effect transistor whose drain is connected to an emitter of the bipolar transistor and whose source is connected to a negative electrode of the power source. The driving circuit comprises an n.p series body formed by connecting an n-channel field effect transistor in series relation with a p-channel field effect transistor, wherein a mid-point to the n.p series body is connected to a base of the bipolar transistor. A drain and a source of the n-channel field effect transistor are connected to a D.C. power source and the mid-point, respectively. A drain and a source of the p-channel field effect transistor are connected to the mid-point and the negative electrode of the power source, and a gate of the field effect transistor and gates of the n-channel and p-channel field effect transistors are connected to an input terminal, whereby the cascode type BiMOS switch is driven by a single positive or negative signal.

REFERENCES:
patent: 3963946 (1976-06-01), Zajac
patent: 4551643 (1985-11-01), Russell et al.
patent: 4651035 (1987-03-01), Shigekane
Chen, Dan Y. et al, "Bipolar-FET Combinational Power Transistors for Power Conversion Applications", IEEE, CH 1855-6/1983, pp. 514-519.

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