Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1992-04-29
1994-05-10
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 39, 257661, 257663, H01L 3922
Patent
active
053110366
ABSTRACT:
A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.
And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.
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patent: 5126801 (1992-06-01), Nishino et al.
Journal of Electronic Engineering, vol. 22, No. 217 (Jan. 1985) p. 20.
T. D. Clark et al., "Feasibility of Hybrid Josephson Field Effect Transistors", Journal of Applied Physics, vol. 51 (May 1980) pp. 2736-2743.
Aoki Masaaki
Harada Yutaka
Hirano Mikio
Kawabe Ushio
Miyake Mutsuko
Carroll J.
Hitachi Ltd
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