Method of manufacturing a semiconductor device, in which photore

Details Method of manufacturing a semiconductor device, in which photore Method of manufacturing a semiconductor device, in which photore

1992-02-07

1994-05-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 156643, 1566591, H01L 2100, H01L 2102, H01L 21312, H01L 21471

Patent

active

053107039

ABSTRACT:
During the manufacture of a semiconductor device in a semiconductor substrate, masks of photoresist are used for selecting given regions to be processed. This photoresist is stripped by subjecting the semiconductor substrate in a processing chamber to an oxygen-containing plasma after-glow, that is passed over the photoresist. In order to limit the penetration of inorganic contaminations released from the photoresist into the silicon oxide layer of the semiconductor substrate, according to the invention, the semiconductor substrate is connected via a first electrode to the positive terminal and via a second electrode arranged at a certain distance therefrom in the processing chamber to the negative terminal of an electric supply source in such a manner that an electrical field is adjusted between the silicon oxide layer and the plasma. The second electrode may be the electrically conducting wall of the processing chamber.

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patent: 3951843 (1976-04-01), Jacob
patent: 4349409 (1982-09-01), Shibayama et al.
patent: 4572759 (1986-02-01), Benzing
patent: 4673456 (1987-06-01), Spencer et al.
patent: 4687544 (1987-08-01), Bersin
Chapman, B., Plasma Etching of a Positively Biased Wafer, IBM Tech. Disclos. Bull., vol. 22, No. 3, Aug. 1979, pp. 1175-1176.
Wolf, S., Silicon Processing for the VLSI Era, vol. 1, pp. 357-361 and Chap. 16, Lattice Press, 1986.
Sze, S., VLSI Technology, Chap. 8, McGraw-Hill, 1983.
Ghandhi, S., VLSI Fabrication Principles, Chap. 9, Wiley & Sons, 1983.

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