Process for producing an arsenic-doped smooth polycrystalline si

Details Process for producing an arsenic-doped smooth polycrystalline si Process for producing an arsenic-doped smooth polycrystalline si

1991-12-23

1994-05-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437162, 437233, 148DIG1, H01L 21225

Patent

active

053106989

ABSTRACT:
In a multistage process for producing a smooth polycrystalline silicon layer, in particular a layer with low arsenic doping, for very large scale integrated circuits, by thermal decomposition of gaseous compounds containing the elements, a doped layer and an undoped silicon layer above the doped layer are deposited directly one after the other in a two-stage process. Initially, a surface-covering arsenic layer being at most a few atoms thick, is deposited as a preliminary lining. Then an undoped amorphous silicon layer is deposited on the arsenic layer at a temperature of less than 580.degree. C. Subsequently, the silicon layer is uniformly doped with the arsenic layer serving as a diffusion source, by temperature treatment. Simultaneously, the amorphous silicon is made into a polycrystalline silicon layer.

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