Method of manufacturing semiconductor device including formation

Details Method of manufacturing semiconductor device including formation Method of manufacturing semiconductor device including formation

1993-05-27

1994-05-10

Fourson, George

Fishing, trapping, and vermin destroying

437 69, 437 56, 437 34, 437 67, 437924, H01L 21265

Patent

active

053106911

ABSTRACT:
A p.sup.- semiconductor substrate has a surface which is high in a memory cell region and low in a peripheral circuit region. An n.sup.+ buried semiconductor layer of uniform thickness is formed on the substrate. An n.sup.- epitaxial layer formed on the buried semiconductor layer is thin in the memory cell region and thick in the peripheral circuit region, so that the surface of the epitaxial layer can be flat. A concave or convex step is formed on the surface of the epitaxial layer in a boundary portion between the memory cell region and the peripheral circuit region in order to use it as an alignment mark in a later processing step.

REFERENCES:
patent: 4554726 (1985-11-01), Hillenius et al.
patent: 5134082 (1992-07-01), Kirchgessner
patent: 5225365 (1993-07-01), Cosentino

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