Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1991-06-06
1993-11-16
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257230, 257233, H01L 2978, H01L 2714, H01L 3100
Patent
active
052626610
ABSTRACT:
The impurity density of a photoelectric transducer n-layer (7) and the impurity density of a p-layer (6) of an impurity region in which the electric transducer (7) and a transfer channel (9) are formed, are each distributed to have its maximum value in a more interior part from the surface of a semiconductor substrate (5). Alternatively, i) a thin, high-density p-layer (34) and ii) a thick, low-density p-layer (33) of an impurity region in which the electric transducer (7) and the transfer channel (9) are formed may be formed. Each minimum potential in these two p-layers (33, 34) is made to have a different dependence on the voltage applied to an n-type semiconductor substrate (5). The thick, low-density p-layer (33) is formed in such a way that it comes into contact with part of the photoelectric transducer n-layer (7) at its bottom portion. The above constitution can bring about a solid-state image pickup device that can prevent the blooming phenomenon, causes less residual images, and can operate as an electronic shutter with ease.
REFERENCES:
patent: 4814848 (1989-03-01), Akimoto et al.
patent: 5191399 (1993-03-01), Maegawa et al.
Patent Abstracts of Japan, vol. 11, No. 304 (E-545) (2751), Oct. 3, 1987 & JP-A-62629369 (Victor Co of Japan Ltd); May 6, 1987.
Patent Abstracts of Japan, vol. 10, No. 24 (E-377) (2081), Jan. 30, 1986 & JP-A-60182768 (Sony K.K.) Sep. 18, 1985.
Patent Abstracts of Japan, vol. 11, No. 355 (E-558) (2802), Nov. 19, 1987 & JP-A-62131566 (Matsushita Electronics Corp.) Jun. 13, 1987.
Ishikawa Katsuya
Kuroda Takao
Okamoto Shigeru
Terakawa Sumio
Limanek Robert
Matsushita Electric - Industrial Co., Ltd.
Mintel William
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