Semiconductor laser

Details Semiconductor laser Semiconductor laser

1980-12-12

1983-02-01

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 357 63, H01S 319

Patent

active

043719678

ABSTRACT:
In a semiconductor laser which has epitaxial layers including an active layer on a semiconductor substrate, a buffer layer is formed neighboring the active layer, in order to prevent undesirable diffusion of a highly diffusing dopant (Zn) into the active layer from an adjacent layer such as the second clad layer. The buffer layer has the same conductivity as that of the adjacent layer, has a broader energy gap than the active layer, and the dopant of the buffer layer is less diffusing than that of the adjacent layer.

REFERENCES:
Kessler, "A Laser That May Change Communications", Electronic Design, vol. 20, Sep. 27, 1970, p. 31.
Yonezu et al., "A GaAs-Al.sub.x Ga.sub.1-x As Double Heterostructure Panar Stripe Laser", Japan, J. Appl. Phys., vol. 12, pp. 1585-1592, Oct. 1973.

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