Tapering of oxidized polysilicon electrodes

Details Tapering of oxidized polysilicon electrodes Tapering of oxidized polysilicon electrodes

1980-10-29

1983-02-01

Edlow, Martin H.

357 68, 357 30, H01L 2904

Patent

active

043718906

ABSTRACT:
A technique for fabricating an oxidized polysilicon electrode structure is disclosed that results in a gently tapered profile at electrode step regions, thereby facilitating the formation of an overlying electrode structure free from physical defects.

REFERENCES:
patent: 3769109 (1973-10-01), MacRae et al.
patent: 3909325 (1975-09-01), Church et al.
patent: 4026733 (1977-05-01), Owen et al.
patent: 4057895 (1977-11-01), Ghezzo
patent: 4090915 (1978-05-01), Keller
patent: 4142925 (1979-03-01), King et al.
patent: 4187125 (1980-02-01), Feist
patent: 4240195 (1980-12-01), Clemens
patent: 4302766 (1981-11-01), Guterman
T. Yanagawa et al, IEEE Transactions on Electron Devices, "Failure Analysis of Evaporated Metal Interconnections at Contact Windows", pp. 964-970, vol. Ed-17, No. 11 Nov. 1970.
M. Hutt et al, Solid State Technology, "Optimization and Specification of Dry Etching Processes", pp. 92-97, Mar. 1980.
W. E. Armstrong et al, J. Electrochem. Soc.: Solid-State Science and Technology, "A Scanning Electron Microscope Investigation of Glass Flow in MOS Integrated Circuit Fabrication", pp. 307-310, vol. 121, No. 2, Feb. 1974.
Research Disclosure Pub. No. 16130, vol. 161, Sep. 1977 published by Industrial Opportunities Ltd., Homewell, Havant, Hampshire, P09 1EF UK.
W. G. Oldham et al, "The Oxidation of Polysilicon," Electrochem. Soc. Meeting, Abstract No. 165, Boston, Mass., Spring 1979.

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