Process for fabricating non-volatile memory cells having improve

Details Process for fabricating non-volatile memory cells having improve Process for fabricating non-volatile memory cells having improve

1995-04-17

1997-07-08

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 44, 437239, H01L 218247

Patent

active

056460597

ABSTRACT:
A process for fabricating non-volatile memory cells having improved voltage coupling ratio by utilizing liquid phase deposition. Polysilicon spacers resulting from the liquid phase deposition increase the surface area of the dielectric layer between floating gate and control gate layers.

REFERENCES:
patent: 5270233 (1993-12-01), Hamatake
patent: 5432112 (1995-07-01), Hong
patent: 5489542 (1996-02-01), Iwai et al.

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