Method of fabricating ultra-large-scale integration metal-oxide

Details Method of fabricating ultra-large-scale integration metal-oxide Method of fabricating ultra-large-scale integration metal-oxide

1995-10-11

1997-07-08

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 41, 437 57, 437200, 437 34, H01L 21265

Patent

active

056460562

ABSTRACT:
In a method for fabricating a ULSI MOSFET, an additional polysilicon layer is used to form polysilicon/metal compound metal contacts on source and drain regions and a gate so as to avoid leakage current and short channel effect problems.

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