Method of lowering resistivity of metal oxide semiconductor powd

Details Method of lowering resistivity of metal oxide semiconductor powd Method of lowering resistivity of metal oxide semiconductor powd

1978-11-07

1981-03-24

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

252518, 357 10, 427 85, 427 87, 427215, 427427, 4274432, 427399, 427108, B05D 512

Patent

active

042580803

ABSTRACT:
The resistivity of an n-type metal oxide semiconductor such as SnO.sub.2, In.sub.2 O.sub.3 or ZnO is lowered by treating the metal oxide with a metal halide such as SnX.sub.2 or SbX.sub.3, in which the oxidation number of the metal is smaller than the largest oxidation number the metal can take, so as to allow the metal oxide to generally uniformly come into contact with the metal halide. The treatment can be done at room temperature by, for example, the use of a solution of the metal halide and does not cause discoloration of the treated metal oxide. This process is applicable also to a conductive material comprising as its essential component at least one n-type metal oxide semiconductor.

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patent: 3441517 (1969-04-01), Brauer et al.
patent: 3503029 (1970-03-01), Matsuoka
patent: 3586534 (1971-06-01), Niha et al.
patent: 3625756 (1971-12-01), Taguchi et al.
patent: 3658583 (1972-04-01), Ogawa et al.
patent: 3658725 (1972-04-01), Masugama et al.
patent: 3778743 (1973-12-01), Matsuoka et al.
"Zinc Oxide Rediscovered", New Jersey Zinc Co., 1957, pp. 28-34.
Loch, "The Semiconducting Nature of Stannic Oxide", The Carborundum Company, Niagara Falls, New York (1963).
Nagasawa et al., "Electrical and Optical Properties of Reduced Stannic Oxide Crystals", Jap. Journal of Applied Physics, vol. 10, No. 4, Apr. 1971.
Kirk-Othmer Encyclopedia of Chemical Technology, vol. 17, pp. 342-347, John Wiley & Sons, 1968.

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