Semiconductor device with disordered active region

Details Semiconductor device with disordered active region Semiconductor device with disordered active region

1985-01-24

1986-06-10

Davie, James W.

Coherent light generators

Particular component circuitry

Optical pumping

357 17, 357 61, 357 91, 372 45, 372 46, H01L 3300, H01S 319

Patent

active

045946035

ABSTRACT:
A semiconductor device is disclosed, which includes a disordered alloy converted from at least a first active semiconductor region and a second semiconductor barrier layer that have been disordered by introduction of a disordering element selected from the group consisting of silicon and krypton such that the alloy exhibits a higher energy gap than the first active semiconductor region.

REFERENCES:
patent: 4378255 (1983-03-01), Holonyak, Jr. et al.
W. D. Laidig et al, "Quenching of Stimulated Phonon Emission in Al.sub.x Ga.sub.1-x As-GaAs Quantum-Well Heterostructures", Solid State Commun. 38, #4, Apr. 1981, pp. 301-304.
W. D. Laidig et al, "Disorder of an AlAs-GaAs Superlattice by Impurity Diffusion", Appl. Phys. Lett. 38, May 15, 1981, pp. 776-778.
N. Holonyak, Jr. et al, "IR-Red GaAs-AlAs Superlattice Laser Monolithically Integrated in a Yellow-Gap Cavity", Appl. Phys. Lett. 39, Jul. 1, 1981, pp. 102-104.
S. W. Kirchoefer et al, "Zn Diffusion and Disordering of an AlAs-GaAs Superlattice Along Its Layers", J. Appl. Phys., Jan. 1982, pp. 766-768.
W. D. Laidig et al, "Induced Disorder of AlAs-AlGaAs-GaAs Quantum-Well Heterostructures", J. Electronic Matter, 11, Jan. 1982, pp. 1-20.

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