Method of manufacturing semiconductor devices having improvement

Details Method of manufacturing semiconductor devices having improvement Method of manufacturing semiconductor devices having improvement

1979-08-02

1981-03-24

Ozaki, G.

Metal treatment

Compositions

Heat treating

29574, 250492A, 357 91, H01L 2126, G01R 3122, H01L 1700

Patent

active

042578256

ABSTRACT:
A method of manufacturing semiconductor devices in which at least one zone is formed in a number of semiconductor wafers by implantation of doping ions and by a subsequent thermal treatment. In order to reduce the costs for the thermal treatment (individual test wafers) and to reduce the spread, at least one test figure is formed in each semiconductor wafer by the implantation and is subjected to a thermal treatment after the implantation of the doping ions by means of an intensive radiation directed thereon. The electrical properties of the test figure are then measured and further thermal treatment of the whole semiconductor wafer is determined in accordance with the result of this measurement.

REFERENCES:
patent: 3723873 (1973-03-01), Witteles
patent: 3725148 (1973-04-01), Kendall
patent: 4151008 (1979-04-01), Kirkpatrick
Dhaka et al., "Measurement . . . Sheet Resistivity", IBM-TDB, 13, (1970), 14.
Young et al., Appl. Phys. Letts., 32, (1978), 139.
Greenwald et al., "J. Appl. Phys.", 50, (Feb. 1979), 783.
Calhoun et al., "Product Simulators", IBM-TDB, 12, (1970), 1214.
Narayan et al., J. Appl. Phys., 49, (1978), 3912.
Young et al., Appl. Phys. Letts. 33, (1978), 14.
Shtyrkov et al., Sov. Phys. Semicond., 9, (1976), 1309.

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