Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1995-10-20

1997-07-08

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723ME, 20429838, C23C 1600

Patent

active

056456441

ABSTRACT:
A plasma processing apparatus comprises means of supplying the microwave, a reaction chamber having a microwave lead-in opening, a microwave window for introducing the microwave provided by the microwave supply means into the reaction chamber through the microwave lead-in opening, and a supporting member having beams for supporting the microwave window. The apparatus has its microwave window divided in correspondence to areas of the supporting member divided by the beams. The apparatus can have a larger microwave window which is reinforced by the beams against the pressure at plasma generation, and is capable of processing large semiconductor substrates and glass substrates for liquid crystal display panels stably and uniformly.

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Komachi, "Affecting Factors on Surface-Wave-Produced Plasma," Journal of Vacuum Science and Technology, Part A, vol. 11, No. 1, Jan. 1993, pp. 164-167.

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